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US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Magnetoresistive memory device and integrated memory circuit" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,571, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetoresistive memory device and in... और पढ़ें


US Patent Issued to NEC on May 12 for "Quantum device comprising first connection portions within deformation suppression region defined by second connection portions" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,572, issued on May 12, was assigned to NEC Corp. (Tokyo). "Quantum device comprising first connection portions within deformation suppressio... और पढ़ें


US Patent Issued to International Business Machines on May 12 for "Trimming intermediate carbon layer to achieve nanometer scale patterning" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,573, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Trimming intermediate carbon layer to achieve ... और पढ़ें


US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on May 12 for "Phase change memory device" (French Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,574, issued on May 12, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris). "Phase change memory device" ... और पढ़ें


US Patent Issued to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY on May 12 for "Resistive switching memory device including dual active layer and array including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,575, issued on May 12, was assigned to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon, South Korea). "Resistive switching mem... और पढ़ें


US Patent Issued to Future Semiconductor Business on May 12 for "Fabrication of N-face III-nitrides by remote epitaxy" (Virginia Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,576, issued on May 12, was assigned to Future Semiconductor Business Inc (Charlottesville, Va.). "Fabrication of N-face III-nitrides by remo... और पढ़ें


US Patent Issued to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY on May 12 for "Method for preparing transition metal chalcogenide film and organometalic promoter and forming the same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,577, issued on May 12, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea). "Method for preparing tran... और पढ़ें


US Patent Issued to ASM IP Holding on May 12 for "Substrate processing method" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,578, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Substrate processing method" was invented by Jeonghoon Ja... और पढ़ें


US Patent Issued to International Business Machines on May 12 for "Ligand selection for ternary oxide thin films" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,579, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Ligand selection for ternary oxide thin films"... और पढ़ें


US Patent Issued to ASM IP Holding on May 12 for "Substrate processing method" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,581, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Substrate processing method" was invented by SangHeon Yon... और पढ़ें